| PART |
Description |
Maker |
| K81A |
NOISE DIODE FOR USE AS A STANDARD NOISE SOURCE FOR METRICWAVES
|
NXP Semiconductors
|
| ADR360 ADR361 ADR363 ADR364 ADR365 ADR366 |
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.048 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.5 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.0 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 4.096 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 5.0 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.3 V-OUT
|
Analog Devices
|
| ADR365A ADR365AUJZ-REEL7 |
Low Power, Low Noise Voltage References with Sink/Source Capability 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO5
Low Power, Low Noise Voltage References with Sink/Source Capability 低功耗，低噪声电压与水槽参源能
|
Analog Devices, Inc.
|
| NC501SM-12 NC501SM-28 NC503SM-28 NC504SM-28 |
Surface Mount Noise Sources 200 kHz to 500 MHz
SURFACE MOUNT NOISE SOURCE SERIES
|
Micronetics, Inc.
|
| CNS7109 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| CNS7106 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| SMN7114-C2A SMN7114 |
SURFACE MOUNT AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| Q347B |
Q347B Millimeter-Wave Noise Source, Q-band
|
Agilent (Hewlett-Packard)
|
| AD7701 ADR439ARMZ ADR439ARMZ-REEL7 ADR439ARZ ADR43 |
Toggle Switch; Circuitry:SPDT; Switch Operation:On-None-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:6A; Leaded Process Compatible:Yes; Mounting Type:Bracket RoHS Compliant: Yes
Ultralow Noise XFET Voltage References with Current Sink and Source Capability 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8
Ultralow Noise XFET Voltage References with Current Sink and Source Capability 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO8
|
Analog Devices, Inc.
|
| D2293UK D2293 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| MAX1479ATEC2R |
300MHz to 450MHz Low-Power, Crystal-Based 10dBm ASK/FSK Transmitter
|
MAXIM - Dallas Semiconductor
|
